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AO6603 Complementary Enhancement Mode Field Effect Transistor
General Description
The AO6603 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6603 is Pb-free (meets ROHS & Sony 259 specifications). AO6603L is a Green Product ordering option. AO6603 and AO6603L are electrically identical.
Features
n-channel p-channel -30V VDS (V) = 20V ID = 1.7 (VGS = 4.5V) -2.5A RDS(ON) < 225m (VGS = 4.5V) < 135m (VGS = -10V)
< 290m (VGS = 2.5V) < 425m (VGS = 1.8V) < 185m (VGS = 2.5V) < 265m (VGS = 1.8V)
D1 TSOP6 Top View G1 S2 G2 16 25 34 D1 S1 D2 G1 S1 G2
D2
S2
n-channel
p-channel
Absolute Maximum Ratings T =25C unless otherwise noted A Symbol Parameter Max n-channel VDS Drain-Source Voltage 20 VGS Gate-Source Voltage 8 Continuous Drain Current A Pulsed Drain Current Power Dissipation
B
Max p-channel -30 12 -2.3 -1.8 -30 1.15 0.73 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
1.7 1.4 15 1.15 0.73 -55 to 150
W C
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-AmbientA Steady-State Maximum Junction-to-AmbientA C Steady-State Maximum Junction-to-Lead
Symbol RJA RJL
Typ 78 106 64
Max 110 150 80
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO6603
N-channel MOSFET Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=250A VGS=4.5V, V DS=5V VGS=4.5V, I D=1.7A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=2.5V, I D=1A VGS=1.8V, I D=0.7A gFS VSD IS Forward Transconductance VDS=5V, ID=1.7A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.4 5 186 262 241 326 2.8 0.69 1 0.4 101 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 17 14 3 1.57 VGS=4.5V, V DS=10V, I D=1.7A 0.13 0.36 3.2 VGS=5V, VDS=10V, RL=3, RGEN=3 IF=1A, dI/dt=100A/s IF=1A, dI/dt=100A/s 4 15.5 2.4 6.7 1.6 16 4 8.1 125 225 315 290 425 0.55 Min 20 1 5 25 0.8 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 2: Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO6603
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 6 3.0V 4 2 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 500 VGS=1.8V Normalized On-Resistance 450 400 RDS(ON) (m) 350 300 250 200 150 100 0 1 2 3 4 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 600 500 400 300 200 100 0 2 3 4 5 6 7 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C IS (A) ID=1.7A 1E+01 1E+00 1E-01 1E-02 1E-03 1E-04 1E-05 0.0 0.5 1.0 1.5 2.0 VSD (Volts) Figure 6: Body-Diode Characteristics 25C VGS=2.5V VGS=4.5V 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=1.8V ID=1.7A 2.5V 1 VGS=2.0V 0 0 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 25C 8.0V 5.0V 4.0V ID (A) ID(A) 3 4 VDS=5V
2 125C
VGS=2.5V ID=1.7A
VGS=4.5V ID=1.7A
125C
Alpha & Omega Semiconductor, Ltd.
RDS(ON) (m)
AO6603
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=10V ID=1.7A 200
Capacitance (pF)
150
Ciss
100
50
Coss
Crss
0 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics
100.0
TJ(Max)=150C TA=25C RDS(ON) limited 0.1s 1ms
20 100s 15 Power (W) 10s 10 5 DC 10 VDS (Volts) 100 0 0.001
TJ(Max)=150C TA=25C
ID (Amps)
10.0
1.0
10ms
1s 10s
0.1 0.1 1
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=110C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 Single Pulse 0.0001 0.001 0.01 0.1 1
PD Ton T
0.01 0.00001
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO6603
P-channel MOSFET Electrical Characteristics (T =25C unless otherwise noted) J Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-2.3A TJ=125C 135 195 8 -0.85 185 265 -1 -1.35 409 55 42 12 0.72 1.34 4.8 8.5 10 55 25.5 26 15.6 -0.6 -10 107 135 -1 Min -30 -1 -5 100 -1.4 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
gFS VSD IS
VGS=-4.5V, ID=-2A VGS=-2.5V, ID=-1A Forward Transconductance VDS=-5V, ID=-2.3A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr tD(off) tf trr Qrr Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=-15V, ID=-2.5A
VGS=-10V, VDS=-15V, RL=6, RGEN=6
IF=-2.5A, dI/dt=100A/s Body Diode Reverse Recovery Charge IF=-2.5A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any n application depends on the user's specific board design. The The current rating is basedthe tthe t 10s thermal resistance given application depends on the user's specific board design. current rating is based on on 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.R5 rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev2: August 2005
Alpha & Omega Semiconductor, Ltd.
AO6603 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20 -10V 15 -5V -4.5V -4V -ID(A) VGS=-3.5V 10 -3V 5 -2.5V 2 -2V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 250 225 200 RDS(ON) (m) 175 150 125 100 75 50 0 1 2 3 4 5 6 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 350 300 250 RDS(ON) (m) 200 150 100 50 0 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C ID=-2.5A -IS (A) VGS=-10V VGS=-4.5V Normalized On-Resistance VGS=-2.5V 1.4 VGS=-2.5V 1.2 ID=-2.5A 1 1.6 VGS=-4.5V, VGS=-10V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -VGS(Volts) Figure 2: Transfer Characteristics 6 125C 4 8 10 VDS=-5V 25C
-ID (A)
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics
125C
125C
Alpha and Omega Semiconductor, Ltd.
AO6603 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 0 0 1 2 3 4 5 6 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-15V ID=-2.5A Capacitance (pF) 600 500 400 300 200 100 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss
Ciss
100.0 TJ(Max)=150C TA=25C -ID (Amps) 10.0 RDS(ON) limited 0.1s 1.0 1s 10s 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 10ms
20 10s Power (W) 100s 1ms TJ(Max)=150C TA=25C 15
10
5
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 Z JA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=110C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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